Apparatus and method for depositing and planarizing thin films of semiconductor wafers

ABSTRACT

An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.

CLAIM OF PRIORITY

This application is a continuation application and claims priority under35 U.S.C. §120 priority from co-pending U.S. patent application Ser. No.11/494,997 filed on Jun. 28, 2006 and entitled “Apparatus and Method forDepositing and Planarizing Thin Films of Semiconductor Wafers,” which inturn is a continuation and claims 35 U.S.C. §120 priority from U.S. Pat.No. 7,153,400 issued on Dec. 26, 2006 and entitled “Apparatus and Methodfor Depositing and Planarizing Thin Films of Semiconductor Wafers,” andboth are incorporated herein by reference.

This application is further a continuation-in-part and claims 35 U.S.C.§120 priority from U.S. Pat. No. 7,198,055 issued on Apr. 3, 2007 andentitled “Meniscus, Vacuum, IPA Vapor, Drying Manifold,” which is acontinuation-in-part of U.S. Pat. No. 7,234,477, issued on Jun. 26, 2007and entitled “Method and Apparatus for Drying Semiconductor WaferSurfaces Using a Plurality of Inlets and Outlets Held in Close Proximityto the Wafer Surfaces,” both of which are incorporated herein byreference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor wafer deposition andplanarization and, more particularly, to apparatuses and techniques formore effectively depositing thin films using localized deposition andfor enabling localized planarization.

2. Description of the Related Art

Electroplating is a well-established deposition technology. In thesemiconductor fabrication arts, electroplating is typically performed ina single-wafer processor, with the wafer immersed in an electrolyte.During electroplating, the wafer is typically held in a wafer holder, ata negative, or ground potential, with respect to a positively chargedplate (also immersed in the electrolyte) which acts as an anode. To forma copper layer, for example, the electrolyte is typically between about0.3M and about 0.85M CuSO₄, pH between about 0 and about 2 (adjusted byH2SO4), with trace levels (in ppm concentrations) of proprietary organicadditives as well as Cl⁻ to enhance the deposit quality. During theplating process the wafer is typically rotated to facilitate uniformplating. After a sufficient film thickness has been achieved during theplating process, the wafer is moved from the plating chamber to anotherchamber where it is rinsed in de-ionized (DI) water, to remove residualelectrolyte from the wafer surface. Next the wafer is subjected toadditional wet processing, to remove unwanted copper from the backsideand bevel edge, and then another DI water rinse removes wet processingchemical residues. Then the wafer is dried and annealed before it isready for the chemical mechanical planarization (CMP) operation.

Unlike vacuum processing of wafers, each “wet” processing step duringwafer processing today is followed by an overhead step of a DI waterrinse. Due to electrolyte dilution concerns and increased hardwaredesign complexity, DI water rinsing is typically not done within theplating chamber. Today, approximately fifty percent of the wetprocessing stations on a wafer plating tool are dedicated to plating,having a significant negative impact on wafer throughput and increasingprocessing cost. In addition, to enable direct copper plating on thebarrier layer, minimizing time between surface activation and plating iscritical. The additional time, to rinse after surface activation and totransport the wafer to the plating module, significantly limits theeffectiveness of the surface activation step. What is needed is a way ofeliminating DI water rinses between wet processing steps.

During the plating process, the wafer acts as a cathode, which requiresthat the power supply be electrically connected to the wafer. Typically,numerous discrete contacts on the wafer holder connect the wafer holderelectrically to the edge of the wafer. The current utilized toelectroplate the wafers is provided through these contacts. Platingcurrent must be evenly distributed around the perimeter of the wafer toprovide uniform deposition. Maintaining consistent contact resistancewith the wafer, through the resistive seed layer, is critical foruniform deposition. Therefore, in an effort to provide uniformdeposition, cleanliness of the contacts is preferred. In some cases,cleaning of the contacts requires additional steps further limiting theproductivity of the plating operation.

Another challenge in copper electroplating is a bipolar effect, observedwhen the contact resistance is very high. This effect induces etching ofthe copper seed layer directly under the contacts, thereby severing asthe electrical contact between the wafer and the power supply duringelectroplating. Prior art approaches have attempted to resolve thisissue by sealing the contacts from the electrolyte, thereby preventingplating on the contacts and eliminating the bipolar effect.Unfortunately, seals are not perfect and contacts become contaminatedand current distribution in the contacts along the wafer peripheryresults in non-uniform plating. Consequently, contact resistance must becontrolled by some other way of active monitoring during the platingprocess.

Additional adverse physical challenges occur when applying the contactsto the surface of the wafer. While the contacts are typically placed inthe exclusion area (e.g., a 1-3 mm outer region of the wafer) of thewafer, some amount of force must be applied to maintain consistentelectrical contact with the wafer. Application of such force can, insome cases cause defects on the wafer due to mechanical stresses oncertain materials, such as porous low-k dielectric films.

As feature dimensions on semiconductor wafers continue to shrink, thecopper seed layer thickness is also expected to decrease, fromapproximately 1000 angstroms today to less than about 400 angstroms.Thickness reduction of the seed layer is necessary to ensure areasonable sized opening at the top of the features so as to enable voidfree gap fill during the copper electroplating process. Since the roleof the seed layer is to distribute the plating current over the entirewafer during electroplating, a thinner more resistive seed layerintroduces a significant challenge in chambers designed for uniformplating near contacts on the wafer periphery. Known as the terminaleffect, this effect is more pronounced on larger wafers, such as today's300 mm wafers.

What is needed therefore, is an electroplating system that limitsrinsing processes and provides sufficient electrical contact withoutapplying excessive surface force while producing uniform electroplatingon wafers with little or no seed layer.

SUMMARY OF THE INVENTION

Broadly speaking, the present invention is an apparatus that provideslocal electroplating using a meniscus based plating process. In theclaimed invention, the plating and planarization process proceeds oneither the entire wafer surface, or in the case of sub-aperture plating,a plating head of smaller size than the wafer scans the wafer andprovides localized plating.

It should be appreciated that the present invention can be implementedin numerous ways, including as a process, an apparatus, a system, adevice or a method. Several inventive embodiments of the presentinvention are described below.

In one embodiment, an electroplating apparatus for electroplating asurface of a wafer is provided. The surface of the wafer is capable ofbeing electrically charged as a cathode. A proximity head capable ofbeing electrically charged as an anode is included. The proximity headhas a plurality of inputs and a plurality of outputs, and when theproximity head is placed close to the surface of the wafer, each of theplurality of inputs is capable of delivering a fluid to the surface ofthe wafer and each of the plurality of outputs is capable of removingthe fluids from the surface of the wafer. The delivery and removal offluids to and from the surface of the wafer enables localized metallicplating when the wafer and proximity head are charged.

In another embodiment of the present invention, a first fluidelectrically charged as an anode is generated between a first proximityhead and the surface of the wafer for depositing a metallic layer. Asecond fluid electrically charged as a cathode for enabling anon-consumable chemical reaction over the surface of the wafer iscapable of being generated between a second proximity head and thesurface of the wafer. An electrical connection is defined between thefirst fluid and the second fluid when depositing the metallic layer overthe surface of the wafer.

In yet another embodiment of the present invention, a first fluidelectrically charged as an anode is generated between a first proximityhead and the surface of the wafer for depositing a metallic layer. Asecond fluid electrically charged as a cathode for enabling anon-consumable chemical reaction over the surface of the wafer iscapable of being generated between a second proximity head and thesurface of the wafer. An electrical connection is defined between thefirst fluid and the second fluid when depositing the metallic layer overthe surface of the wafer. The second proximity head is placed inphysical contact with the deposited layer by way of a pad to enableremoval of at least a portion of the metal layer.

The advantages of the present invention are numerous, most notably; theembodiments enable localized plating thereby reducing the active area ofplating and improving chemical exchange. Localized metallic platingreduces the total plating current that must be distributed over the seedlayer, thereby significantly reducing the resistive seed layer effectand improving deposit uniformity. In-situ film thickness control andplanarization produce increased productivity by reducing the number ofwafer transfers during processing, and consolidating severalapplications on one piece of equipment. Other aspects and advantages ofthe present invention will become apparent from the following detaileddescription, taken in conjunction with the accompanying drawings,illustrating by way of example the principles of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the followingdetailed description in conjunction with the accompanying drawings. Tofacilitate this description, like reference numerals designate likestructural elements.

FIG. 1A illustrates an electroplating apparatus.

FIG. 1B illustrates an electroplating apparatus shown during localizedmetallic plating.

FIG. 1C provides a bottom view of a proximity head of the electroplatingapparatus.

FIG. 1D illustrates a prospective view of an electroplating apparatusequipped with a polishing pad for planarization.

FIG. 2A illustrates an electroplating apparatus without mechanicalcontacts to a wafer.

FIG. 2B illustrates an electrolytic reaction used by the electroplatingapparatus without mechanical contacts to the wafer for an electroplatingoperation.

FIG. 2C provides a cross sectional view of the electroplating apparatuswithout mechanical contacts, showing an electroplating head and a secondhead at an interface of the wafer surface.

FIG. 2D provides a cross sectional view of the electroplating apparatuswithout mechanical contacts, showing the progression of the depositedlayer as a electroplating head and a second head are applied over thesurface of the wafer.

FIG. 3 provides a cross sectional view of an electroplating andplanarization apparatus, showing the electroplating and electrolyticheads at the interface with the wafer surface, where the second head isequipped with a polishing pad for planarization.

FIG. 4 is a flowchart for operation of the electroplating apparatus.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

An invention, for methods and apparatuses for electroplating surfaces ofa substrate, is disclosed. In the following description, numerousspecific details are set forth in order to provide a thoroughunderstanding of the present invention. It will be understood, however,by one of ordinary skill in the art, that the present invention may bepracticed without some or all of these specific details. In otherinstances, well known process operations have not been described indetail in order not to unnecessarily obscure the present invention.

FIG. 1A is a drawing of an exemplary electroplating apparatus 100 inaccordance with one embodiment of the present invention. A wafer 104with a seed layer 106 is placed on a support 130. A negative bias powersupply 124 charges the wafer 104 to function as a cathode by way ofelectrical contact 132. Electrical contact 132 may be established in theform of a single ring surrounding the wafer 104, an individualmechanical contact, or a plurality of individual contacts. In apreferred embodiment, the electrical contact 132 is applied to aperiphery of the wafer 104, such that contact is made with an edgeexclusion region 133. The edge exclusion region 133 is typically between1 to 3 mm, for 200 and 300 mm wafers.

A proximity head 102 charged as an anode by a positive power supply 122is suspended above the wafer 104 by an arm 103. The arm 103 can containa conduit channel 105 for holding one or more conduits for delivery andremoval of fluids utilized in the electroplating operation. Of course,the conduit channel 105 can be coupled to the proximity head 102 by anyother suitable technique, such as strapped to the arm 103, etc. In oneembodiment, the arm 103 is part of system that facilitates movement ofthe proximity head 102 across the wafer 104 in a direction 120.

Movement of the proximity head 102 can be programmed to scan the wafer104 in any number of ways. It should be appreciated that the system isexemplary, and that any other suitable type of configuration that wouldenable movement of the head(s) into close proximity to the wafer may beutilized. For example, when the wafer is rotated, the proximity head 102can start at the center of the wafer 104 and progressively move linearlyto the outer edge. In another embodiment, the proximity head 102 couldnavigate a fixed wafer while circling in an orbital fashion or otherwisemove over the wafer in a fashion that enables processing of all portionsof the wafer. In another embodiment, the proximity head 102 may scan thewafer using reciprocating movement, move in a linear fashion from oneedge of the wafer to another diametrically opposite edge of the wafer,or other non-linear movements may be utilized such as, for example, in aradial motion, in a circular motion, in a spiral motion, in a zigzagmotion, etc. The motion may also be any suitable specified motionprofile as desired by a user. During this movement, it is desired thatthe plating operation deliver a uniform layer of metallic material tothe surface of the wafer 104. Details regarding the functionality of theproximity head 102 and the plating techniques will be described ingreater detail below.

Localized metallic plating of the electroplating apparatus is shown inFIG. 1B. As used herein, localized metallic plating is meant to definean area beneath the proximity head 102 where a metallic material isdeposited. As shown in the drawings, the area beneath the proximity head102 is less than the surface area of the wafer 104. Thus, localizedmetallic plating will occur only under the proximity head 102 at a givenpoint in time. To accomplish more metallic plating over the surface ofthe wafer 104, the proximity head 102 will need to move over anothersurface area of the wafer 104. In exemplary embodiments, the proximityhead 102 will be coupled to an arm 103 as shown in FIG. 1A. Although anynumber of movement patterns can be used to ensure that the desired areasof the wafer 104 are adequately plated with a particular metallicmaterial, one way is to move the arm 103 while the wafer 104 is rotatedin a controlled environment. In addition, an arm 103 is only oneexemplary way of moving the proximity head 102. For instance, the wafer104 can be moved instead of moving the proximity head 102.

Returning to FIG. 1B, the proximity head 102 is placed over the wafer104 having a seed layer 106. The seed layer 106 is optional, however,some embodiments may benefit from having the seed layer 106 formedthereon before an electroplating operation is performed. When copper isthe material being plated, the seed layer is typically a thin layer ofcopper that may be sputtered or deposited using known techniques.Thereafter, a deposited layer 108 is formed over the seed layer 106 asthe proximity head 102 proceeds in a direction 120 across the wafer 104.The deposited layer 108 is formed by way of an electrochemical reactionfacilitated by an electrolyte 110 contained in a meniscus 116 that isdefined between the proximity head 102 and the seed layer 106. In analternative embodiment, the deposited layer 108 can be formed over alayer that is not a seed layer. An example of such layer may be abarrier layer or some other layer material.

FIG. 1C illustrates a generic bottom view of the proximity head 102, inaccordance with one embodiment of the present invention. The proximityhead 102 has a plurality of inputs 112 a and 112 b and outputs 112 c.The plurality of inputs 112 a and 112 b, and the plurality of outputs112 c can be defined by one or more individual conduits. Each conduitcan be machined or form-made during the manufacture of the proximityhead 102 body. In another embodiment, the plurality of inputs 112 a and112 b and outputs 112 c can be defined by annular rings that enablefluids to be transported in a similar way as would the conduits. Theselection of the particular structure for the plurality of inputs 112 aand 112 b and outputs 112 c, as will be appreciated by those skilled inthe art, can take on many physical forms and shapes. However, it isimportant for the selected form or shape to be able to functionallydeliver fluids by way of inputs and remove fluids by way of outputs.Consequently, in one embodiment, the wafer 104 remains dry in allregions except for in regions below the proximity head 102.

As shown, a plating chemistry is supplied by way of the plurality ofinputs 112 b that enable localized metallic plating beneath theproximity head 102. Plating chemistry may be designed for deposition ofcopper, however other plating chemistries may be substituted dependingon the particular application (i.e., the type of metallic materialneeded). The plating chemistry could be defined by an aqueous solutionfor depositing metals, alloys, or composite metallic materials. In oneembodiment, deposited metals can include, but not limited to, one of acopper material, a nickel material, a thallium material, a tantalummaterial, a titanium material, a tungsten material, a cobalt material,an alloy material, a composite metallic material, etc.

The plating chemistry is preferably confined in a meniscus 116 that isdefined as a thin layer of fluid lying over the seed layer 106 beneaththe proximity head 102. To further confine and define the meniscus 116,an isopropyl alcohol (IPA) vapor supplied by way of the plurality ofinputs 112 a. The thickness of the meniscus 116 may vary based on thedesired application. In one example, the thickness of the meniscus mayrange between about 0.1 mm and about 10 mm. Thus, the proximity head 102is placed close to the wafer surface. As used herein, the term “close”defines a separation between the undersurface of the proximity head 102and the surface of the wafer 104, and that separation should besufficient to enable the formation of a fluid meniscus. A plurality ofoutputs 112 c provide vacuum to remove the fluid byproducts of theplating reaction delivered by the plurality of inputs 112 b and 112 a.

In accordance with the invention, the deposited plating material isformed by a chemical reaction taking place in an electrolyte 110supplied by the plurality of inputs 112 b. Charging the proximity head102 as an anode facilitates the chemical reaction. In one example, theproximity head is electrically coupled to a positive bias voltage supply122. To enable the plating, a reduction of ions in the chemistry isperformed at the seed layer 106, which is charged as a cathode throughthe electrical contact 132 to the negative bias power supply 124. Thechemical reaction causes a metallic layer to be formed as depositedlayer 108. Reaction byproducts and depleted reactant fluids are removedvia the plurality of outputs 112 c.

In another embodiment, an eddy current sensor 114 is integrated into theproximity head 102. The eddy current sensor 114 is used to determine thepresence and thickness of a metallic layer and to determine when aparticular process is complete (e.g., end pointing). In one embodiment,the thickness of the deposited layer 108 can be sensed during thedeposition process. In this manner, controlled application of metallicmaterials can be attained. Of course, other techniques for measuring thethickness of the deposited layer 108 can be used. For a more detaileddescription of the functionality of eddy current sensors, reference canbe made to U.S. patent application Ser. No. 10/186,472, entitled“Integration of Sensor Based Metrology into Semiconductor ProcessingTools”, filed on Jun. 28, 2002, and which is incorporated herein byreference.

FIG. 1D illustrates, in accordance with another embodiment, anelectroplating and polishing system 101. In this embodiment, theproximity head 102 has been equipped with a polishing pad 150, whichassists by planarizing the deposited layer 108. An abrasive-freereactive chemical supplied by the plurality of inputs 112 a and 112 b isapplied to the polishing pad 150 facilitating a planarized layer 108′.The polishing pad 150 can be made from any number of materials, so longas channels in the pad material allow passage of chemical fluids. In oneexample, the material can be porous polymer material, similar to thosematerials commonly used in chemical mechanical polishing (CMP)equipment. Other materials can include, for example, polyurethanecompounds, fixed abrasive materials such as MWR64 or MWR69 from 3M, ofMinneapolis Minn., etc. In one exemplary operation, a deposition ofmetallic material will occur almost simultaneously with the polishingoperation that is facilitated by the polishing pad 150. In anotherembodiment, the polishing can be performed using the same proximity head102 used to deposit metallic material. In another embodiment, theplating head and polishing head can be independent workpieces, with thepolishing head trailing the plating head. However, polishing can occurat a later point in time after deposition is completed. As can beappreciated, the actual combination of deposition and polishingoperations can be selected depending on the desired application. Byalternating plating and planarization steps or by performingsimultaneous plating and planarization, topographic variation andundesired overburden material is removed.

FIG. 2A is an illustration of an exemplary contact-less electroplatingapparatus 200 in accordance with one embodiment of the presentinvention. A contact-less electroplating apparatus as used herein is anapparatus that utilizes electrolytic contact. In this embodiment, theproximity head 102 is supported in a close relationship to the wafer 104by the arm 103 so as to create the meniscus 116. In this illustration,the seed layer 106 is exposed to the meniscus 116 while the wafer 104 isheld on the support 130, as described above. The proximity head 102 ischarged electrically to perform as an anode by connecting to thepositive power supply 122. Additionally, a second proximity head 102′ issupported by an arm 103, and acts as a facilitator to enable plating bythe proximity head 102, while at the same time not removing materialfrom the surface of the wafer 104. The arm 103 could be an extension ofthe arm holding the proximity head 102 or a separate arm. In thisalternative embodiment, the second proximity head 102′ is charged as acathode by a negative bias power supply 124. A meniscus 116′ is definedbetween the second proximity head 102′ and the seed layer 106. Thefacilitating enabled by the meniscus 116′ is a result of the chemistrythat defines the meniscus 116′ itself. Exemplary chemicalcharacteristics of the meniscus 116′ are provided below.

FIG. 2B illustrates an exemplary electrolytic reaction used by thecontact-less electroplating apparatus 200 for metallic plating of thedeposited layer 108. As previously discussed, beneath the proximity head102, the meniscus 116 contains an electrolytic plating chemistry that ischarged by the anode through the positive bias voltage supply 122.

The meniscus 116 includes IPA vapor supplied by way of the plurality ofinputs 112 a and an electrolyte 110 plating chemistry supplied by way ofthe plurality of inputs 112 b, as shown in FIG. 2C. In an exemplaryembodiment, the plurality of inputs 112 b beneath the proximity head 102provides an electrolytic solution whereby the reaction at the surface ofthe wafer 104 is Cu⁺²+2e⁻Cu when the proximity head 102 has been chargeda positive bias voltage supply 122. As this is a REDOX reaction, thereaction away from the wafer 102 surface is Cu→Cu⁺²+2e⁻ if a consumableCu electrode is used, or 2H₂O—O₂+2e⁻ if a non-consumable electrode isused.

Similarly the second proximity head 102′, which serves as the counterelectrode is charged by the negative bias voltage supply 124. A secondmeniscus 116′ formed beneath the second proximity head 102′ containselectrolytic chemistry. The second meniscus 116′ includes IPA vaporsupplied by way of the plurality of inputs 112 a and an electrolyte 110′as supplied through the plurality of inputs 112 b′. In an exemplaryembodiment, the plurality of inputs 112 b′, provide an electrolyticsolution at the second proximity head 102′ whereby the reaction at thesurface of the wafer 104 is of the form Me^(X) [complex]→Me^(X+1)[complex]+e⁻. In this case, Me can be a metal ion such as Cu, and x is2. The complexing agent can be ethylene diamine or ammonia (NH3). Thereaction away from the surface of the wafer 104 can be the reverse, forexample Me^(X+1) [complex]+e⁻Me^(X) [complex]. Other chemistries mayprovide a similar function; the chemistry is selected such that thecounter electrode chemistry is at a lower potential than the Cu→Cu⁺²+2e⁻potential, thus suppressing the dissolution of Cu at the counterelectrode. Additionally, the electrolyte 110′ beneath the secondproximity head 102′ can be tailored with other additives, such asethylene glycol, to assist in the suppression of Cu dissolution. Anelectrical connection 136 is established between the proximity head 102and the second proximity head 102′ through the seed layer 106. Throughthis electrical connection 136, the electrolyte 110 and the electrolyte110′ will be connected completing the REDOX couple and enabling platingby the proximity head 102. It is important to note that the secondproximity head 102′ provides the link to a cathode (i.e., negative biasvoltage supply), and thus, no physical contact with the wafer 104 isneeded. The combination of the proximity head 102 and the secondproximity head 102′ defines a contact-less connection to the wafer 104providing more efficient and uniform plating of desired metallicmaterials.

In another embodiment, an eddy current sensor 114 is integrated into theproximity head 102. The eddy current sensor 114 is used to determine thepresence and thickness of a metallic layer and to determine when aparticular process is complete. In one embodiment, the thickness of thedeposited layer 108 can be sensed by the eddy current sensor 114 duringthe deposition process. In this manner, controlled application ofmetallic materials can be attained. FIG. 2D shows the progression as thedeposited layer 108 is applied over the surface of the wafer 104, wherethe second proximity head 102′ is now sitting over the deposited layer108.

FIG. 3 illustrates an electroplating and planarizing apparatus 300 inaccordance with one embodiment of the present invention. The proximityhead 102 operates in the manner previously discussed. The second head102′ provides an electrical path for the plating operation as describedabove. Additionally, in this embodiment the second head 102′ is equippedwith a polishing pad 150. The polishing pad 150 provides for leveling ofthe deposited layer 108 resulting in a planarized layer 108′. Thepresence of the polishing pad 150 does not inhibit electricalconnectivity 136 of the second head 102′. An abrasive-free reactivechemical may also be delivered by way of the plurality of inputs 112 aand 112 b′ to assist in the leveling process. The planarized layer 108′can be achieved under the second proximity head 102′ simultaneously tothe deposition process beneath the proximity head 102.

In another embodiment, planarization is accomplished beneath a thirdhead that operates independently of the first proximity head 102 andsecond proximity head 102′. Fluid delivered via meniscus formation andconfinement with IPA can be of an abrasive-free chemistry thatfacilitates planarization in concert with a polishing pad integrated onthe head.

In another embodiment a second proximity head 102′ with a polishing pad150 is equipped with a scatterometer system 156, which providesplanarization control by way of sensing backscatter parameters from thetopography of the deposited layer 108.

FIG. 4 is a flow chart diagram that provides an exemplary method ofoperation for an electroplating and planarizing apparatus 400 inaccordance with the present invention. Given the electroplatingapparatus as described in FIGS. 1-3 above, an operator must provide awafer with a seed layer 402. In an alternative embodiment, the wafer maynot have a seed layer yet formed thereon. The wafer may be transportedto the wafer support in a number of ways. Wafer transport may include aseries of manual or automated robotic movements assisted by mechanical,vacuum, electrostatic or other ways of holding the wafer. Once the waferis placed on the support the operator must select the material desiredfor deposition 404. Next the proximity head is placed over the desireddeposition region 406. Placement of the proximity head may be predefinedand facilitated by an automated routine. A voltage bias may be appliedto the proximity head responsible for deposition 408 at any time priorto deposition including during the wafer and arm movements or when thefluid is provided through the plurality of inputs described above. Oncethe proximity has a bias voltage applied, the selected fluid inputs andvacuum outputs are applied 410 beneath the proximity head and thematerial is deposited 412.

In-situ measurement of the deposited layer 414 ensures that the desiredthickness is achieved 416. The proximity head will remain in its currentposition until the desired thickness is achieved by way of the feedbackprovided from the in-situ measurement system 414. In one embodiment themeasurement system may be one of the eddy current sensor systemdescribed above. Of course, other thickness measuring techniques mayalso be used. Once desired deposition thickness is achieved, theproximity head responsible for deposition will discontinue fluiddelivery and removal 420. The system will then be setup for the nextwafer 422. In one embodiment the proximity head is removed from theplane of the wafer while in other embodiments the wafer itself may betransported while the head remains above the wafer. Once the wafer isremoved another wafer may be placed on the support for subsequentdeposition.

If the system is equipped with a planarization component as described inFIG. 1D and FIG. 3 above, the deposited material will be leveled toassist uniform deposition across the desired area. In-situ measurementtechniques may be used to ensure that the deposited layer is planarized424. When the sufficient planarity is achieved, the fluid delivery andremoval system can be discontinued 420 and the system can be setup forthe next wafer 422. In one embodiment, the proximity heads are removedfrom the plane of the wafer, while in other embodiments, the waferitself may be transported while the heads remain above the wafer. Oncethe wafer is removed, another wafer may be placed on the support forsubsequent deposition and planarization.

While this invention has been described in terms of several preferredembodiments, it will be appreciated that those skilled in the art uponreading the preceding specifications and studying the drawings willrealize various alterations, additions, permutations and equivalentsthereof. For instance, the electroplating system described herein may beutilized on any shape and size of substrates such as for example, 200 mmwafers, 300 mm wafers, flat panels, etc. It is therefore intended thatthe present invention includes all such alterations, additions,permutations, and equivalents as fall within the true spirit and scopeof the claimed invention.

1. An electroplating apparatus for electroplating a surface of a wafer,the surface of the wafer capable of being electrically charged as acathode, comprising: a proximity head capable of being electricallycharged as an anode, the proximity head having a plurality of inputs anda plurality of outputs, and when the proximity head is placed close to,but at a separation from the surface of the wafer, each of the pluralityof inputs is capable of delivering a fluid to the surface of the waferand each of the plurality of outputs is capable of removing the fluidsfrom the surface of the wafer to define a controlled meniscus betweenthe proximity head and the surface of the wafer, the delivery andremoval of fluids to and from the surface of the wafer enabling alocalized metallic plating when the wafer and proximity head are chargedand contact is made to an edge exclusion region of the wafer, and thelocalized metallic plating facilitated at a location of the controlledmeniscus, and the controlled meniscus being capable of movement wheneither the proximity head or the wafer are moved; and an eddy currentsensor integrated into the proximity head for end pointing the localizedmetallic plating over a region of the wafer, the eddy current sensordefined in the proximity head and proximate to a surface of theproximity head that is defined to face the surface of the wafer whenpresent; wherein the wafer is electrically charged as the cathode by wayof a mechanical contact to an edge exclusion region of the wafer througha negative bias power supply.
 2. An electroplating apparatus forelectroplating a surface of a wafer as recited in claim 1, wherein theproximity head is electrically charged as the anode through electricalcontact with a positive bias voltage supply.
 3. An electroplatingapparatus for electroplating a surface of a wafer as recited in claim 1,wherein each of the plurality of inputs on the proximity head aredefined as one of circular conduits, annular rings, and discreteconduits.
 4. An electroplating apparatus for electroplating a surface ofa wafer as recited in claim 1, wherein the fluid is defined by one ormore fluids and the fluids are selected from the group comprised ofisopropyl alcohol (IPA), electrolytic solution, a plating chemistry thatenables metallic plating, and an abrasive-free reactive chemical.
 5. Anelectroplating apparatus for electroplating a surface of a wafer asrecited in claim 5, wherein the plating chemistry is defined by anaqueous solution for depositing metals including one of a coppermaterial, a nickel material, a thallium material, a tantalum material, atitanium material, a tungsten material, a cobalt material, an alloymaterial, and a composite metallic material.
 6. An electroplatingapparatus for electroplating a surface of a wafer as recited in claim 1,wherein each of the plurality of outputs on the proximity head aredefined as one of circular conduits, annular rings, and discreteconduits.
 7. An electroplating apparatus for electroplating a surface ofa wafer as recited in claim 1, wherein the localized metallic plating,confines a volume of the fluid within an area beneath the proximityhead, the area being less than an entirety of the wafer surface.
 8. Anelectroplating apparatus for electroplating a surface of a wafer, thesurface of the wafer capable of being electrically charged as a cathode,comprising: a proximity head capable of being electrically charged as ananode, the proximity head having a plurality of inputs and a pluralityof outputs, and when the proximity head is placed close to, but at aseparation from the surface of the wafer, each of the plurality ofinputs is capable of delivering a fluid to the surface of the wafer, andeach of the plurality of outputs is capable of removing the fluids fromthe surface of the wafer to define a controlled meniscus between theproximity head and the surface of the wafer, the delivery and removal offluids to and from the surface of the wafer enabling a localizedmetallic plating when the wafer and proximity head are charged andcontact is made to an edge exclusion region of the wafer, and thelocalized metallic plating facilitated at a location of the controlledmeniscus, and the controlled meniscus being capable of movement wheneither the proximity head or the wafer are moved; and an eddy currentsensor integrated into the proximity head for end pointing the localizedmetallic plating over a region of the wafer, the eddy current sensordefined in the proximity head and proximate to a surface of theproximity head that is defined to face the surface of the wafer whenpresent, the eddy current sensor positioned at about a center locationof the proximity head; a mechanical contact electrically chargeable as acathode is defined to contact an edge exclusion region of the wafer whenpresent, the mechanical contact being coupled to a negative bias powersupply, and the proximity head is electrically charged as the anodethrough electrical contact with a positive bias voltage supply.
 9. Anelectroplating apparatus for electroplating a surface of a wafer asrecited in claim 8, wherein each of the plurality of inputs on theproximity head are defined as one of circular conduits, annular rings,and discrete conduits.
 10. An electroplating apparatus forelectroplating a surface of a wafer as recited in claim 8, wherein thefluid is defined by one or more fluids and the fluids are selected fromthe group comprised of isopropyl alcohol (IPA), electrolytic solution, aplating chemistry that enables metallic plating, and an abrasive-freereactive chemical.
 11. An electroplating apparatus for electroplating asurface of a wafer as recited in claim 10, wherein the plating chemistryis defined by an aqueous solution for depositing metals including one ofa copper material, a nickel material, a thallium material, a tantalummaterial, a titanium material, a tungsten material, a cobalt material,an alloy material, and a composite metallic material.
 12. Anelectroplating apparatus for electroplating a surface of a wafer asrecited in claim 8, wherein each of the plurality of outputs on theproximity head are defined as one of circular conduits, annular rings,and discrete conduits.
 13. An electroplating apparatus forelectroplating a surface of a wafer as recited in claim 8, wherein theeddy current sensor is defined between two inputs.
 14. An electroplatingapparatus for electroplating a surface of a wafer as recited in claim 8,wherein the localized metallic plating, confines a volume of the fluidwithin an area beneath the proximity head, the area being less than anentirety of the wafer surface.